This link between the input and output circuits is the main feature of transistor action because the transistors amplifying properties come from the consequent control which the Base exerts upon the Collector to Emitter current. So in a NPN Transistor it is the movement of negative current carriers (electrons) through the Base region that constitutes transistor action, since these mobile electrons provide the link between the Collector and Emitter circuits. The Base supply voltage V B is connected to the Base resistor R B, which again is used to limit the maximum Base current. The Collector is connected to the supply voltage V CC via the load resistor, RL which also acts to limit the maximum current flowing through the device. If some data source only has data for the active region, this is probably good enough.Then the voltage sources are connected to an NPN transistor as shown. In other words, all of the non-linearities are important, and the behaviour in regions outside of as well as including the active region are also important. I am interested in writing some simulations involving BJTs which requires more information than can be obtained from the typical transistor equations.
Some might become dependent on each other if a complete circuit is drawn including an impedance on the base and collector (or emitter) nodes.Īre there any example devices which have (presumably large) tables of data available for download for measurements of these parameters? I don't know if these are all independent - I believe they all are. Transistor temperature, which other variables such as the Collector-Emitter current, might have a second order effect from.Transistor HFE (beta) which is a function of temperature.To explain further, for a simple BJT circuit we have the following variables.
Is there anywhere I can download some current-voltage data for a bipolar junction transistor? (It doesn't matter that much which one.)
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